| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which has a floating gate and a control gate and whose source and drain regions are asymmetrical and which can avoid the increase of the resistance of a bit line arranged between the floating gates in itself and besides can scale down the bit line width. SOLUTION: This is a manufacturing method for a semiconductor storage device consisting of forming a floating gate 3 through an insulating film 2 on a semiconductor substrate 1, and forming a sidewall spacer 8 by an insulating film at the side wall of that floating gate, digging down the semiconductor substrate to form a groove 9 using that side wall as a mask, then, forming a lightly doped layer 10 from one sidewall of the groove to the bottom by oblique ion implantation to the obtained semiconductor substrate, and also, forming a heavily doped layer 11 from the other sidewall of the groove to the bottom by reversely oblique ion implantation.
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