发明名称 GATE THRESHOLD TEMPERATURE COMPENSATION CIRCUIT FOR MOSFET FOR SWITCHING POWER SOURCE
摘要 PROBLEM TO BE SOLVED: To keep stable operation though the threshold voltage of a MOSFET being the main semiconductor element of a switching power source varies with temperature. SOLUTION: Between the gate of the MOSFET 1 and a resistor 17, series diodes 21 and 22 having temperature characteristic is inserted and a PTC resistance element 18 having a positive temperature coefficient is inserted via a transistor 23 to form the charging circuit of a capacitor 7 with the element 18 and a resistor 8. When a temperature is raised, forward voltage is lowered by the temperature characteristic of the diodes 21 and 22 to reduce the charging current of the capacitor 7 to compensate the temperature.
申请公布号 JP2001168699(A) 申请公布日期 2001.06.22
申请号 JP19990348330 申请日期 1999.12.08
申请人 FUJI ELECTRIC CO LTD 发明人 KUMAGAI SATOSHI;UEKI KOICHI
分类号 H03K17/14;(IPC1-7):H03K17/14 主分类号 H03K17/14
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