发明名称 |
GATE THRESHOLD TEMPERATURE COMPENSATION CIRCUIT FOR MOSFET FOR SWITCHING POWER SOURCE |
摘要 |
PROBLEM TO BE SOLVED: To keep stable operation though the threshold voltage of a MOSFET being the main semiconductor element of a switching power source varies with temperature. SOLUTION: Between the gate of the MOSFET 1 and a resistor 17, series diodes 21 and 22 having temperature characteristic is inserted and a PTC resistance element 18 having a positive temperature coefficient is inserted via a transistor 23 to form the charging circuit of a capacitor 7 with the element 18 and a resistor 8. When a temperature is raised, forward voltage is lowered by the temperature characteristic of the diodes 21 and 22 to reduce the charging current of the capacitor 7 to compensate the temperature.
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申请公布号 |
JP2001168699(A) |
申请公布日期 |
2001.06.22 |
申请号 |
JP19990348330 |
申请日期 |
1999.12.08 |
申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
KUMAGAI SATOSHI;UEKI KOICHI |
分类号 |
H03K17/14;(IPC1-7):H03K17/14 |
主分类号 |
H03K17/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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