| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer prober superior in breakdown voltage characteristics and never shorted even in operation at a high temperatures whereby the reliability of semiconductor related apparatus is improved. SOLUTION: The wafer prober is constituted by forming a nickel-made chuck top conductor layer 28 on the surface of an inspection stage 12 made of aluminum nitride material having a maximum pore diameter of 50μm or less.
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