| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which stability of holding data is improved. SOLUTION: At the time of standby, bit lines BL1, /BL1 are pre-charged and potentials of word lines WL1, /WL2 are set to a slightly higher potential than a ground potential. As a stable holding current is made to flow in a node holding a H level out of nodes N5-N8 through an access transistor, stable data can be held. Further, at the time of access, a selecting word line is made a H level, and a non-selection word line is made a ground potential.
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