发明名称 SILICON CRYSTALS, IN PARTICULAR FOR SOLAR CELLS AND METHOD FOR THE PRODUCTION THEREOF
摘要 The invention relates to a method for producing a silicon crystal, wherein said crystal is produced using the Czochralski method (CZ method) from a quartz crucible. The invention also relates to the use of one base-doped silicon crystal produced using the Cz method and comprising at least one doping agent from the main chemical groups III and/or V. In order to economically produce a silicon crystal having suitable base doping, said crystal is produced according to the Czochralski method from a quartz crucible, whereby the melt is provided with at least one doping agent from the main chemical groups III and/or V for targeted base doping. The melt and silicon material and/or doping agents are post-charged in such a way that the difference in crystal doping remains within predefined limits.
申请公布号 WO0144542(A1) 申请公布日期 2001.06.21
申请号 WO2000EP12910 申请日期 2000.12.18
申请人 SIEMENS SOLAR GMBH;ENDROES, ARTHUR;PALM, JOERG 发明人 ENDROES, ARTHUR;PALM, JOERG
分类号 C30B15/00;C30B15/04;C30B15/36;H01L31/0368;(IPC1-7):C30B15/04;H01L31/028;H01L31/036 主分类号 C30B15/00
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