发明名称 |
SILICON CRYSTALS, IN PARTICULAR FOR SOLAR CELLS AND METHOD FOR THE PRODUCTION THEREOF |
摘要 |
The invention relates to a method for producing a silicon crystal, wherein said crystal is produced using the Czochralski method (CZ method) from a quartz crucible. The invention also relates to the use of one base-doped silicon crystal produced using the Cz method and comprising at least one doping agent from the main chemical groups III and/or V. In order to economically produce a silicon crystal having suitable base doping, said crystal is produced according to the Czochralski method from a quartz crucible, whereby the melt is provided with at least one doping agent from the main chemical groups III and/or V for targeted base doping. The melt and silicon material and/or doping agents are post-charged in such a way that the difference in crystal doping remains within predefined limits.
|
申请公布号 |
WO0144542(A1) |
申请公布日期 |
2001.06.21 |
申请号 |
WO2000EP12910 |
申请日期 |
2000.12.18 |
申请人 |
SIEMENS SOLAR GMBH;ENDROES, ARTHUR;PALM, JOERG |
发明人 |
ENDROES, ARTHUR;PALM, JOERG |
分类号 |
C30B15/00;C30B15/04;C30B15/36;H01L31/0368;(IPC1-7):C30B15/04;H01L31/028;H01L31/036 |
主分类号 |
C30B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|