| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a polyorganosiloxane film which composition gives a film having a low dielectric constant and a high elastic modulus which film is useful as an insulating film between layers in a semiconductor device or the like. SOLUTION: The composition for forming a film contains (A) a condensed material obtained by hydrolyzing and condensing at least one selected from the group consisting of compounds of general formulas (1), (2) and (3) in the presence of an alkali metal catalyst and (B) a condensed material obtained by hydrolyzing and condensing at least one selected from the group consisting of compounds of general formulas (1), (2) and (3) in the presence of an acid catalyst. Ra(Si)(OR1)4-a (1) Si(OR2)4 (2) R3a(R4O)3-b Si-(R7)d-Si(OR5)3-c R6c (3) (wherein R is hydrogen, fluorine or a monovalent organic group; R1 to R6 are each a monovalent organic group; R7 is oxygen, phenylene or -(CH2)n-, a is an integer of 1-2; b and d are each a number of 0-2; d is 0 or 1; and n is an integer of 1-6).
|
