发明名称 ESD protection circuit without overstress gate-driven effect
摘要 An ESD protection circuit is connected to an integrated circuit to dissipate an electrostatic charge from an ESD source placed in contact with two terminals of the integrated circuit to prevent damage to the integrated circuits. The ESD protection circuit has a ESD shunting circuit for shunting the electrostatic charge from integrated circuit. The ESD shunting circuit has a first port connected to one terminal of the integrated circuit, a second port connected to another terminal of the integrated circuit, and a third port. The ESD protection circuit additionally has an ESD detection circuit. The ESD detection circuit has a first input port connected to the one terminal of the integrated circuit, a second input port connected to the other terminal of the integrated circuit, and an output port connected to the third port of the ESD shunting circuit. When the ESD detection circuit detects the presence of the electrostatic charge from the ESD source, the ESD detection circuit generates an excess voltage at the third port that will damage the ESD shunting circuit. Finally The ESD protection circuit has a voltage clamping circuit connected between the third port of the ESD shunting circuit and one of the terminals of the integrated circuit to prevent the generation of the excess voltage at the third port of the ESD shunting circuit.
申请公布号 US6249410(B1) 申请公布日期 2001.06.19
申请号 US19990378948 申请日期 1999.08.23
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 KER MING-DOU;CHANG HUN-HSIEN
分类号 H01L27/02;H02H9/04;(IPC1-7):H02H3/22 主分类号 H01L27/02
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