| 发明名称 |
Lifetime measurement of an ultra-thin dielectric layer |
| 摘要 |
A method is described for taking a lifetime measurement of an ultra-thin dielectric layer. In order to discover the life time of the ultra-thin dielectric layer, the measurement comprises using about one half of a stress voltage to measure a time-dependent leakage current of the ultra-thin dielectric layer.
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| 申请公布号 |
US6249139(B1) |
申请公布日期 |
2001.06.19 |
| 申请号 |
US19990393054 |
申请日期 |
1999.09.09 |
| 申请人 |
UNITED MICROELECTRONICS CORP.;UNITED SEMICONDUCTOR CORP. |
发明人 |
FU KUAN-YU;CHEN MAINN-GWO;LIU CHUAN H. |
| 分类号 |
G01R31/12;G01R31/26;(IPC1-7):G01R31/26 |
主分类号 |
G01R31/12 |
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