| 摘要 |
PURPOSE: An ion implanter is provided to allow an easy control of a tilt angle and to permit a uniform ion implantation over an entire wafer. CONSTITUTION: The ion implanter includes a vacuum chamber(20) into which an ion beam(21) is emitted through a window(22), a scan axis(40) having a driving motor(41), a scan axis corrector(50) enabling a modification of the tilt angle of the scan axis(40), a horizontal compensator(60) fastened to a vertical shifter(42) driven by the driving motor(41) and having a horizontally movable rod(64), a vertical compensator(70) fastened to an end of the horizontally movable rod(64) and having a vertically movable rod(74), and a tilter(90) coupled to an end of the vertically movable rod(74) and supporting a wafer(W). Therefore, it is possible to modify the tilt angle of the scan axis(40) without changing a position of the wafer(W).
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