METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to stabilize a characteristic of a transistor, by reducing electric field concentration in an edge portion of an active region by using a shallow trench isolation(STI) process. CONSTITUTION: A trench(11) is formed in a field region of a substrate(10), and a field oxide layer(13) is formed in the trench to isolate an active region of the substrate by a shallow trench isolation(STI) process. A low dielectric inversion layer(20) is formed on the field oxide layer. A conductive layer for a gate oxide layer(15) and a gate electrode is stacked on the inversion layer and the active region. Patterns for the gate oxide layer and the gate electrode located on a part of the inversion layer and on the active region are formed.