| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to increase the surface area of a floating gate while reducing a difference in height thereof. CONSTITUTION: In the method, the first gate(206) is formed on a semiconductor substrate(200), and an insulating layer(208) is formed thereon to expose the first gate(206). Next, the second gate(220) is formed on the insulating layer(208) to be connected with the first gate(206). Then, pluralities of hemispherical grains(222) are formed on a surface of the second gate(220), so that the floating gate is made up of the first gate(206) and the second gate(208) with the hemispherical grains(222). Thereafter, a dielectric layer(224) is formed on the floating gate, and a control gate(226) is formed thereon. Accordingly, the hemispherical grains(222) not only improve a coupling ratio between the floating gate and the control gate but also increase the surface area of the floating gate.
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