METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce capacitance of a parasitic capacitor formed between a bit line and a contact plug or between the bit lines, by forming a spacer of the bit line wherein the spacer has a structure of an oxide layer/a nitride layer or a nitride layer/an oxide layer/a nitride layer. CONSTITUTION: A bit line(206) is formed on a semiconductor substrate. The first insulating layer(208) is deposited on the entire surface of the semiconductor substrate to cap the bit line. The second insulating layer(210) is deposited on the first insulating layer to cap the bit line. The third insulating layer(212) is deposited on the entire surface of the semiconductor substrate to form a contact plug(216) between the bit lines.