METHOD FOR FORMING CAPACITOR HAVING HEMISPHERICAL-GRAINED SILICON LAYER IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor having a hemispherical-grained silicon layer in a semiconductor device is provided to allow a reliable and stable formation of the hemispherical-grained silicon layer by adjusting contaminant in a clean room. CONSTITUTION: In the method, after a silicon lower electrode is formed on a semiconductor substrate, the hemispherical-grained silicon layer is formed on the silicon lower electrode. Next, a dielectric layer and an upper electrode are formed in sequence on the hemispherical-grained silicon layer. In particular, an exposure time measured from the end of formation of the silicon lower electrode to the start of formation of the hemispherical-grained silicon layer is adjusted to 0 - 10 minutes in an ozone concentration of 0 - 20 ppb.