发明名称 METHOD FOR MANUFACTURING DIELECTRIC LAYER
摘要 PURPOSE: A method for manufacturing a dielectric layer is provided to prevent an electrical characteristic from being deteriorated in a subsequent process after a dielectric layer is formed. CONSTITUTION: An upper electrode(23) is formed on the dielectric layer having an excessive quantity of oxygen. An interlayer dielectric(24) or passivation layer is selectively formed on the upper electrode. A heat treatment process is performed regarding the resultant structure having the interlayer dielectric or passivation layer to activate the oxygen excessively added in the dielectric layer.
申请公布号 KR20010046864(A) 申请公布日期 2001.06.15
申请号 KR19990050818 申请日期 1999.11.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIL, DEOK SIN
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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