| 摘要 |
PURPOSE: To provide a plasma processing device which is capable of measuring plasma emission in a processing chamber stably and accurately for many hours without deteriorating a measuring window through which plasma emission is measured in transmissivity. CONSTITUTION: A plasma processing chamber processes a wafer with plasma through such a manner where plasma is generated in a processing chamber 100, by interaction between electromagnetic waves transmitted from a UHF band antenna 110 provided inside the processing chamber 100 and a magnetic field formed by a magnetic field generating means 101 installed around the processing chamber 100. A hollow tube 142 is installed in an opening 141 provided to the side wall 102 of the processing chamber 100, and a plasma emission measuring window 143 is fixed to the tip of the hollow tube 142. The line of magnetic force of a magnetic field formed by the magnetic field generating means 101 is so set as to form an angle with the hollow tube 142, by which plasma can be prevented from penetrating into the hollow tube 142, so that deposits are restrained from adhering to the measurement window 143, and the measurement window 143 is prevented from deteriorating in transmissivity with time and can be kept constant in rarnsmissivity.
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