发明名称 FIELD EMISSION ELEMENT AND MANUFACTURING METHOD OF THE SAME
摘要 PURPOSE: A field emission element and manufacturing method of the same are provided to simplify its structure and improve the uniformity of an electron to be emitted from a microtip. CONSTITUTION: A field emission element comprises a cathode electrode(52), a gate insulating layer(54) and a gate electrode(56), a resistance layer(57) and a microtip(58). The cathode electrode(52) is formed on a grass substrate or a silicone substrate. The gate insulating layer(54) and the gate electrode(56) are subsequently formed and have a gate hole. The resistance layer(57) and the microtip(58) is subsequently formed in the upper part of the cathode electrode within the gate hole. The preparing method comprises a step for forming subsequently the cathode electrode layer, the gate insulating layer(54) and the gate electrode layer on the grass or silicone substrate, a step for removing subsequently the gate electrode layer and the gate insulating layer(54) to have the gate hole such that the cathode electrode layer is exposed, a step for forming the separating layer such that the gate hole is separated from the gate electrode layer, a step for forming the resistance layer(57) in the upper part of the exposed cathode electrode(52) and separating layer, and a step for forming the microtip(58) in the resistance layer(57) formed within the gate hole.
申请公布号 KR20010046796(A) 申请公布日期 2001.06.15
申请号 KR19990050700 申请日期 1999.11.15
申请人 INSTITUTE FOR ADVANCED ENGINEERING 发明人 CHOI, YEONG HWAN;NAM, MYEONG U
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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