发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to increase the degree of integration by simultaneously forming a flash cell and SRAM cell. CONSTITUTION: A field oxidation layer(42) is formed to isolate each cell part of a semiconductor substrate(41) having a flash cell part, an SRAM cell part, a logic cell part and a high voltage cell part. A gate insulation layer(45) is formed. Ion for controlling threshold voltage is injected into the semiconductor substrate on the flash cell part. A floating gate(46a) and a first gate electrode(46b) are simultaneously formed on the flash cell part and the high voltage cell part. A DDD(Double Diffusion Drain) region(47) is formed on the surface of the semiconductor device on both sides of the first gate electrode. An ONO layer is formed on the floating gate. Ion for controlling threshold voltage is injected into the substrate on the SRAM cell part and the logic cell part. A control gate(49a), a second gate electrode(49b) and a third gate electrode(49c) are simultaneously formed respectively on the ONO layer, the SRAM cell part and the logic cell part. A source/drain impurity diffused area is formed on the surface on both sides of each gate.
|
申请公布号 |
KR20010048210(A) |
申请公布日期 |
2001.06.15 |
申请号 |
KR19990052799 |
申请日期 |
1999.11.25 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, JAE SEUNG;KIM, SEONG YEON;LEE, SANG BAE;SEO, JEONG HUN |
分类号 |
H01L27/115;(IPC1-7):H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|