发明名称 GATE DRIVE CIRCUIT AND METHOD OF VOLTAGE DRIVE TYPE SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To control an over-voltage based on voltage unbalance depending on the difference of turning off timing of each element in view of preventing breakdown of elements on the occasion of forming each arm of a power converting circuit with serial connection of the voltage drive type elements. SOLUTION: In the case where each arm is formed of serial connection of two voltage drive type elements, since a voltage is applied only to voltage drive type element Q1 which is turned off earlier, for example, in an upper arm, when the over-voltage of Q1 is detected with the gate drive circuit GDU1, above problem can be solved by turning on again the element Q1.
申请公布号 JP2001161059(A) 申请公布日期 2001.06.12
申请号 JP19990340650 申请日期 1999.11.30
申请人 FUJI ELECTRIC CO LTD 发明人 MARUYAMA KOJI
分类号 H02M7/537;H02M1/00 主分类号 H02M7/537
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