发明名称 |
Method of simultaneously forming a line interconnect and a borderless contact to diffusion |
摘要 |
A method for simultaneously forming a line interconnect such as a bitline and a borderless contact to diffusion, e.g. bitline contact, is described. A semiconductor substrate having prepatterned gate stacks thereon is covered with a first dielectric to form a first level and then a second dielectric is deposited which forms a second level. Line interconnect openings are defined in the second level by lithography and etching. Etching is continued down to monocrystalline regions in an array region of the substrate to form borderless contact openings coincident to the line interconnects between the gate stacks. The openings are filled with one or more conductors to form contacts to diffusion, e.g. bitline contacts, which are coincident to the line interconnects, e.g. bitlines.
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申请公布号 |
US6245651(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US20000481916 |
申请日期 |
2000.01.12 |
申请人 |
INTENATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIVAKARUNI RAMA;NESBIT LARRY ALAN;RADENS CARL JOHN |
分类号 |
H01L23/522;H01L21/28;H01L21/768;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/320 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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