PHOTORESIST PATTERN FORMING METHOD WHICH SUPPRESSES OCCURRENCE OF DEFECT AND DEVELOPING SOLUTION FOR DIMINISHING DEFECT

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of defects on a substrate after a developing step in the formation of an ultrafine photoresist pattern at least partially having a pattern of <=0.25μm pattern width. SOLUTION: In the pattern forming method, development is carried out with a developing solution containing a metal ion-free organic base and a nonionic surfactant as essential components in the developing step of photolithography while keeping 45.0-65.0 mN/m (20 deg.C) surface tension of the developing solution through the developing step. The developing solution for diminishing defects contains 1-5 wt.% metal ion-free organic base and 100-1,500 ppm nonionic surfactant and has 45.0-65.0 mN/m (20 deg.C) initial surface tension.