发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which utilizes a nitride semiconductor and can emit high-luminance light at a high luminous efficiency. SOLUTION: The light emitting element is constituted by laminating nitride semiconductors containing at least Ga upon a substrate in p- and n-type. Particularly, a plurality of nitride semiconductor layers is formed on the same film- forming substrate in a state where the layers are electrically separated from each other and each nitride semiconductor layer is electrically connected with a conductive wire. |
申请公布号 |
JP2001156331(A) |
申请公布日期 |
2001.06.08 |
申请号 |
JP19990340039 |
申请日期 |
1999.11.30 |
申请人 |
NICHIA CHEM IND LTD |
发明人 |
KOMAKI TOSHIO;KITANO AKIYUKI |
分类号 |
H01L33/08;H01L33/12;H01L33/32;H01L33/62 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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