发明名称 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which utilizes a nitride semiconductor and can emit high-luminance light at a high luminous efficiency. SOLUTION: The light emitting element is constituted by laminating nitride semiconductors containing at least Ga upon a substrate in p- and n-type. Particularly, a plurality of nitride semiconductor layers is formed on the same film- forming substrate in a state where the layers are electrically separated from each other and each nitride semiconductor layer is electrically connected with a conductive wire.
申请公布号 JP2001156331(A) 申请公布日期 2001.06.08
申请号 JP19990340039 申请日期 1999.11.30
申请人 NICHIA CHEM IND LTD 发明人 KOMAKI TOSHIO;KITANO AKIYUKI
分类号 H01L33/08;H01L33/12;H01L33/32;H01L33/62 主分类号 H01L33/08
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