发明名称 INTEGRATED CIRCUIT DEVICE, ELECTRONIC CIRCUIT EQUIPMENT, AND CIRCUIT-MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To improve performance and at the same time save power of an integrated circuit where one portion of circuits operates constantly and one portion of circuit pauses appropriately. SOLUTION: A third transistor 123 where a gate insulation film 130 is thickest is driven with a high voltage, and is operated speedily while a gate leak current is small. A first transistor 121 where the gate insulation film 130 is the thinnest and a second transistor 122 where the gate insulation film 130 is not thinnest are driven by a low voltage, and the first transistor 121 is allowed to pause appropriately although the second transistor 122 is operated constantly. The second transistor 122 constantly operates at a low speed while the gate leak current is small, and the first transistor 121 pauses appropriately while the gate leak current is not small and operates speedily, thus optimizing the transistors 121-123 according to applications and performance.
申请公布号 JP2001156260(A) 申请公布日期 2001.06.08
申请号 JP20000032047 申请日期 2000.02.09
申请人 NEC CORP 发明人 KIMIZUKA NAOHIKO;GOTO YOSHIRO;IMAI KIYOTAKA
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/088;H03K19/00;(IPC1-7):H01L27/04 主分类号 H01L27/04
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