| 摘要 |
PURPOSE: A high-speed semiconductor memory device is provided to improve an operating speed by rearranging a color register from an interface block to a read/write block so as to reduce power consumption at a block write operation. CONSTITUTION: A memory cell block(30) includes a memory cell and a sense amplifier for reading and amplifying data stored in the memory cell. An input/output line(io) transfers data read output from the memory cell block(30) and data to be written to the memory cell block(30). A read/write block(20) reads data from the memory cell block(30) to transfer the read data to the input/output line, or writes data from the outside to the memory cell block through the input/output line. A global input/output line(gio) transfers data read out from the memory cell block, or data to be written to the memory cell block. An interface block(10) transfers external data to the global input/output line, or data on the global input/output line to the outside. A color register(40) is disposed in the read/write block(20), and temporarily stores data, used frequently, among externally supplied data in order to use at a block write operation.
|
