发明名称 MINI BATCH FURNACE
摘要 A heating apparatus, system, and method for isothermally distributing a temperature across a semiconductor device during processing. The present invention provides a furnace assembly, which includes a processing chamber configured to removably receive a plurality of semiconductor wafers. The invention includes a first heating circuit and a second heating circuit. In accordance with the present invention, the first heating circuit provides a variable temperature, which may be controlled during processing. The second heating circuit provides a constant temperature. The temperature of the first heating circuit can be adjusted to keep the process chamber temperature at the constant and uniform level provided by the second heating circuit. The wafer carrier is positioned vertically within the processing chamber using an actuation mechanism. After the wafers are processed, the actuation mechanism is used to remove the wafer carrier from the process chamber. The wafers can be transported to a cooling chamber, where the wafer cooling process may commence. As the wafer carrier is removed from the process chamber, the process chamber is kept substantially enclosed using insulators, so that the processing temperature within the cavity can be substantially isothermally maintained.
申请公布号 WO0140552(A1) 申请公布日期 2001.06.07
申请号 WO2000US32620 申请日期 2000.11.29
申请人 WAFERMASTERS, INCORPORATED 发明人 YOO, WOO, SIK
分类号 H01L21/22;C30B31/12;C30B35/00;H01L21/00;H01L21/324 主分类号 H01L21/22
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