Semiconductor device having multilevel interconnection structure and method for fabricating the same

摘要

A method for fabricating a semiconductor device having a multilevel interconnection structure according to the present invention includes the steps of: covering a surface of a substrate with an insulating film; depositing a conductive film on the insulating film; forming a first interlevel dielectric film on the conductive film; forming an interlevel contact hole in the first interlevel dielectric film so as to reach the conductive film; filling in the interlevel contact hole with an interconnecting metal; forming a masking layer, defining a pattern of a first interconnect layer, on the first interlevel dielectric film so as to cover at least part of the interconnecting metal; forming the first interconnect layer out of the conductive film by etching the first interlevel dielectric film using the masking layer as a mask and by etching the conductive film using the masking layer and the interconnecting metal as a mask; removing the masking layer; depositing a second interlevel dielectric film over the substrate so as to cover the interconnecting metal and the first interconnect layer; planarizing the second interlevel dielectric film, thereby exposing at least part of the interconnecting metal; and forming a second interconnect layer to be electrically connected to an upper part of the interconnecting metal.