发明名称 |
Voltage boost reset circuit for a flash memory |
摘要 |
A voltage boost circuit (111) for a memory (100) includes a boosting circuit (110) which is coupled to a boosted node (120) to boost a word line voltage for accessing a core cell of the memory. The voltage boost circuit further includes a reset circuit (112) coupled to the boosted node and including a switchable zero-threshold transistor (202) for resetting the boosted node to a reset voltage (VCC).
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申请公布号 |
US6243316(B1) |
申请公布日期 |
2001.06.05 |
申请号 |
US20000501159 |
申请日期 |
2000.02.09 |
申请人 |
ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED |
发明人 |
AKAOGI TAKAO;AL-SHAMMA ALI K.;CLEVELAND LEE EDWARD;KIM YONG;LIN JIN-LIEN;TEH BOON TANG;NGUYEN KENDRA |
分类号 |
G11C5/14;G11C8/08;G11C16/08;(IPC1-7):G11C7/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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