发明名称 Voltage boost reset circuit for a flash memory
摘要 A voltage boost circuit (111) for a memory (100) includes a boosting circuit (110) which is coupled to a boosted node (120) to boost a word line voltage for accessing a core cell of the memory. The voltage boost circuit further includes a reset circuit (112) coupled to the boosted node and including a switchable zero-threshold transistor (202) for resetting the boosted node to a reset voltage (VCC).
申请公布号 US6243316(B1) 申请公布日期 2001.06.05
申请号 US20000501159 申请日期 2000.02.09
申请人 ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED 发明人 AKAOGI TAKAO;AL-SHAMMA ALI K.;CLEVELAND LEE EDWARD;KIM YONG;LIN JIN-LIEN;TEH BOON TANG;NGUYEN KENDRA
分类号 G11C5/14;G11C8/08;G11C16/08;(IPC1-7):G11C7/00 主分类号 G11C5/14
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