发明名称 METHOD FOR TESTING MEMORY OF SEMICONDUCTOR DEVICE HAVING MEMORY
摘要 PURPOSE: A method for testing a memory of a semiconductor device having a memory is provided to extend a testing mode. CONSTITUTION: In the first step, a test enabling signal controlling a memory testing mode of a semiconductor device, and a test address signal selecting memory cells of the memory are selected, are inputted to a semiconductor device. In the second step, the testing mode of the semiconductor device is established at a falling edge and a rising edge of the test enabling signal. When the testing mode is established, the test address signal are all inputted at the falling edge and the rising edge of the test enabling signal, thereby selecting the memory cells. The testing mode is first established at the falling edge of the test enabling signal and second at the rising edge of the test enabling signal.
申请公布号 KR20010045564(A) 申请公布日期 2001.06.05
申请号 KR19990048895 申请日期 1999.11.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, HYE IN;SONG, IN HO
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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