| 摘要 |
PURPOSE: A method for manufacturing a static random access memory(SRAM) device is provided to guarantee insulating with an impedance resistor, a node contact line and a plug line even if a cell area is reduced, by connecting cross-coupled impedance resistors with a conductive line of a buried conductive line of a plug type. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate(20) having a bit line in contact with a field oxide layer(21), an access transistor, a drive transistor and a drain region of the access transistor. A predetermined portion of the interlayer dielectric is etched to expose a source region of the access transistor and to form a node contact hole. A polysilicon layer is deposited on the interlayer dielectric to be in contact with the exposed source region. A predetermined portion of the polysilicon layer is patterned to form a node contact line(29a) in contact with the source region and an impedance resistor(29b) connected to the node contact line. An insulating layer is deposited on the interlayer dielectric having the node contact line and the impedance resistor. The insulating layer is etched to expose a predetermined portion of the impedance resistor and a predetermined portion of the interlayer dielectric to form a via hole so that the cross-coupled impedance resistors are connected. A conductive material is filled in the via hole to form a plug line(31).
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