Non-volatile ferroelectric storage cell comprises gate electrodes on an active region of a substrate, ferroelectric layers with electrodes and metallizations

摘要

Non-volatile ferroelectric storage cell comprises a number of first gate electrodes (123) and second gate electrodes (123a) electrically separated from each other on an active region of a substrate; a number of first electrodes (127) of first ferroelectric capacitors connected with the substrate on the side of the first gate electrode, and a number of first electrodes (127a) of second ferroelectric capacitors connected to the substrate on the side of the second gate electrode; ferroelectric layers (128, 128a) formed on the first electrodes; second electrodes (160) of the first ferroelectric capacitors and second electrodes of the second ferroelectric capacitors formed on the ferroelectric layers; and a first metallization (130) electrically connecting the first gate electrodes and a second metallization (130a) electrically connecting the second gate electrodes. An Independent claim is also included for a process for the production of a non-volatile ferroelectric storage cell. Preferred Features: A barrier metal layer made of TiN, RuO2, IrO2 and PtSi2 is formed below the first electrodes of the ferroelectric capacitors.