发明名称 |
Buried shallow trench isolation and method for forming the same |
摘要 |
An integrated semiconductor device includes a substrate having a buried shallow trench isolation structure and an epitaxial layer disposed over the substrate and the buried shallow trench isolation structure. The epitaxial layer includes a shallow trench isolation structure that extends over the buried shallow trench isolation structure in the substrate to substantially reduce leakage current in the substrate to prevent device latch-up.
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申请公布号 |
US2001002059(A1) |
申请公布日期 |
2001.05.31 |
申请号 |
US20010754145 |
申请日期 |
2001.01.05 |
申请人 |
WINBOND ELECTRONICS CORPORATION |
发明人 |
WONG SHYH-CHYI;LIN SHI-TRON |
分类号 |
H01L21/336;H01L21/762;H01L21/8238;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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