Substrate used in the production of integrated circuits comprises a first insulating layer on the substrate, a second insulating layer on the first insulating layer, hollow chambers

摘要

Substrate comprises a first insulating layer (I1) on the substrate, a second insulating layer (I2) on the first insulating layer, hollow chambers (H) arranged in the first insulating layer which cover the second insulating layer, and metal structures (MS) arranged on a horizontal surface. The hollow chambers are arranged so that they do not border the metal structures, where at least one hollow chamber is arranged between the metal structures. The whole horizontal cross-sections of the chambers are the same in the first insulating layer. An Independent claim is also included for a process for the production of the substrate. Preferred Features: The first insulating layer is made of silicon nitride and the second insulating layer is made of SiO2.