发明名称 |
Alignment dip back oxide and code implant through poly to approach the depletion mode device character |
摘要 |
A metal code process for a read-only memory (ROM) combines the alignment dip back process (to reduce the polyoxide thickness over the gate electrode and to protect the field oxide) with a double charge implant approach to provide the function of a depletion mode ROM cell. The alignment dip back process also avoids leakage current problems. A stable depletion mode device character is achieved by implant step energies greater than 150 keV.
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申请公布号 |
US6238983(B1) |
申请公布日期 |
2001.05.29 |
申请号 |
US19990385521 |
申请日期 |
1999.08.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHU CHENG-YU;SHEU JENQ-DONG;LIN DEAN E.;CHU YI-JING |
分类号 |
H01L21/8246;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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