发明名称 Dynamic random access memory device having booster against battery exhaustion
摘要 In order to prevent data bits stored in the memory cells of a dynamic random access memory device from destruction, a booster circuit is coupled between a power supply pin and an internal power supply line, and keeps the voltage level on the internal power supply line constant regardless of the voltage level at the power supply pin.
申请公布号 US6240037(B1) 申请公布日期 2001.05.29
申请号 US19930046849 申请日期 1993.04.14
申请人 NEC CORPORATION 发明人 KUWABARA SHINICHI
分类号 G11C11/407;G11C5/14;G11C11/4074;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/407
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