SILICON SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING THE SAME AND SOI WAFER

摘要

PROBLEM TO BE SOLVED: To obtain a defect-free silicon single crystal wafer prepared by CZ (Czochralski) method and composed of N-region in whole region in which void- type defects and dislocation clusters are eliminated under stable producing conditions having broad controllability and easy to control since OSF(oxidation induced stacking fault) region is required to be deactivated and pulling conditions of a crystal therefor are then searched when the crystal pulled up in the N-region containing the OSF region and doped with nitrogen is used as the defect-free wafer and to provide a method for producing the wafer. SOLUTION: This silicon single crystal wafer grown by the CZ method is doped with nitrogen and composed of the N-region in the whole region and has <=8 ppma interstitial oxygen concentration or at least the void-type defects and the dislocation clusters are eliminated from the whole region in the silicon single crystal wafer doped with nitrogen and having <=8 ppma interstitial oxygen concentration.