| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment device which can improve a control property for changing the ion density and ion energy in plasma individually. SOLUTION: A semiconductor substrate 1 is housed in an etching device 10 as a plasma treatment device according to the present invention. This etching device 10 also has a chamber 14, into which a gas for forming plasma is supplied, a susceptor 11 provided in this chamber 14 to support the semiconductor substrate 1, an opposed electrode 13 positioned as opposed to this susceptor 11 and a high-frequency power source unit 4 capable of outputting high-frequency power having an arbitrary frequency selected from a predetermined range of frequencies. Plasma is generated in the chamber by applying the high- frequency power to the susceptor 11.
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