| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern at high contrast required for increasing the degree of freedom of photoprocess and the yield while shortening the exposure time and for facilitating fabrication of a device. SOLUTION: In the method for forming a fine pattern, a light shielding film of photomask is brought into contact with a photoresist on a substrate and then pressed against the photoresist thus bringing micro openings, formed by the light shielding film, close to the photoresist before the photoresist is exposed with evanescent light. |
