| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in wiring resistance caused by dishing and erosion. SOLUTION: In a primary polishing process, a wafer 21 is tightly adhered to a solid pad 11 including an abrasive grain, and surface of the wafer 21 is polished by rotating an abrasive grain on the solid pad 11. In a secondary process, the wafer 21 is brought into tight contact with a soft urethane pad 12 excluding abrasive grains, and the surface of the wafer 21 is polished by rotating the urethane pad 12 while supplying slurry 30 including the abrasive grain. As a result, dishing and erosion are extremely reduced due to highly uniform polishing in the primary polishing process, and scratches cased by the primary polishing can be eliminated in the secondary polishing process. |
