| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory and its manufacturing method that can suppress a band-to-band current, decrease the deterioration of a tunnel window film, reduce cells and easily increase a capacitance ratio. SOLUTION: The nonvolatile semiconductor memory composes a P-type silicon substrate 7 wherein a source 5 and a drain 4 are provided on part of its upper side, a floating gate 3 provided on the P-type silicon substrate 7 via a thermal oxide film 6, a control gate 2 provided on the floating gate 3 via the thermal oxide film 6, and a tunnel region 1 provided in a part between the floating gate 3 and the control gate 2. The distance between the control gate 2 and the floating gate 3 at the position in which the tunnel region 1 is provided is set shorter than the distance between the control gate 2 and the floating gate 3 around the tunnel region 1.
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