| 摘要 |
<p>A composition for antireflection coating comprising (a) polyacrylic acid, (b) polyvinylpyrrolidone, (c) CnF2n+1COOH (n is an integer of 3 to 11), and (d) tetramethylammonium hydroxide is applied to a photoresist film to form an antireflection film. The coated photoresist film is exposed to light and developed to obtain a resist pattern of a satisfactory shape free from T-tops, round tops, etc.</p> |
