发明名称 |
Method for forming dielectric layers |
摘要 |
A method for forming dielectric layers is described. Wiring lines are formed on a provided semiconductor substrate. Spacers are formed on the sidewalls of the wiring lines. A liner layer is formed on the wiring lines and on the spacers by a first HDPCVD step, such as unbiased, unclamped HDPCVD. A dielectric layer is formed on the liner layer to cover the wiring lines and to fill gaps between the wiring lines by a second HDPCVD step.
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申请公布号 |
US2001001191(A1) |
申请公布日期 |
2001.05.17 |
申请号 |
US20010752470 |
申请日期 |
2001.01.02 |
申请人 |
LIU CHIH-CHIEN;WU JUAN-YUAN;LUR WATER |
发明人 |
LIU CHIH-CHIEN;WU JUAN-YUAN;LUR WATER |
分类号 |
C23C16/50;H01L21/316;(IPC1-7):C23C14/34 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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