| 摘要 |
An input terminal and an input protective resistor of an N-type diffusion layer connected thereto are provided on a P-type semiconductor substrate. First and second N-type MOS transistors for internal circuit are connected to a grounding wiring at respective source diffusion layers. The first MOS transistor is located at closer distance from the input protective resister than the second MOS transistor. The source diffusion layer of the first MOS transistor and the grounding wiring are connected via a high melting point metal layer wiring, such as a tungsten silicide or so forth to increase a resistance to improve electrostatic breakdown potential. Accordingly, the distance between the input protective resistor and the first MOS transistor can be made smaller to eliminate dead space around the input protective resistor to enable reduction of a chip area. <IMAGE> |
