THIN-FILM TRANSISTOR, LIQUID-CRYSTAL DISPLAY SUBSTRATE, AND MANUFACTURING METHOD THEREFOR

摘要

PURPOSE: A thin-film transistor is provided to exhibit less off-current where no high-accuracy alignment is required in a manufacturing process, even if the gate length becomes shorter. CONSTITUTION: A current path pattern of a semiconductor material is formed on the insulating main surface of a substrate. A gate pattern crossers the current path pattern in two levels, at first and second intersection points. A channel region is formed in a region overlapping the gate pattern of a current path pattern. A gate-insulating film is provided between the current path pattern and the gate pattern. The current path pattern has a low-concentration drain structure on both sides of the channel region, corresponding to the first intersection point which has no low-concentration drain structure at a region which makes contact with the channel region, corresponding to the second intersection point.