发明名称 SEMICONDUCTOR MEMORY DEVICE RECEIVING REFERENCE VOLTAGE FROM THE EXTERNAL
摘要 PURPOSE: A semiconductor memory device receiving a reference voltage from the external is provided to comprise a reference voltage generator supplying a stable reference voltage to an internal circuit. CONSTITUTION: The semiconductor memory device(201) includes: an input pad(211) where a reference voltage(Vref1) is applied from the external of the semiconductor memory device; a reference voltage generator(221) inputting the reference voltage applied to the input pad and buffering and outputting the reference voltage; an internal voltage converter(231) generating a voltage(V2) of a gate voltage(Vgate) level required in driving an output driver(251) by receiving a reference voltage(Vref2) from the reference voltage generator; an output multiplexer(241) outputting one or some of data(Di) generated in the semiconductor memory device; the output driver inputting the voltage(V2) of the gate voltage level from the internal voltage converter and a signal(q) from the output multiplexer, and outputting the signal(q) to an output pad(261) by being controlled by the voltage(V2) of the gate voltage level.
申请公布号 KR20010038053(A) 申请公布日期 2001.05.15
申请号 KR19990045861 申请日期 1999.10.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, MI SEON;SONG, HO SEONG
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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