发明名称 |
SEMICONDUCTOR MEMORY DEVICE RECEIVING REFERENCE VOLTAGE FROM THE EXTERNAL |
摘要 |
PURPOSE: A semiconductor memory device receiving a reference voltage from the external is provided to comprise a reference voltage generator supplying a stable reference voltage to an internal circuit. CONSTITUTION: The semiconductor memory device(201) includes: an input pad(211) where a reference voltage(Vref1) is applied from the external of the semiconductor memory device; a reference voltage generator(221) inputting the reference voltage applied to the input pad and buffering and outputting the reference voltage; an internal voltage converter(231) generating a voltage(V2) of a gate voltage(Vgate) level required in driving an output driver(251) by receiving a reference voltage(Vref2) from the reference voltage generator; an output multiplexer(241) outputting one or some of data(Di) generated in the semiconductor memory device; the output driver inputting the voltage(V2) of the gate voltage level from the internal voltage converter and a signal(q) from the output multiplexer, and outputting the signal(q) to an output pad(261) by being controlled by the voltage(V2) of the gate voltage level.
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申请公布号 |
KR20010038053(A) |
申请公布日期 |
2001.05.15 |
申请号 |
KR19990045861 |
申请日期 |
1999.10.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, MI SEON;SONG, HO SEONG |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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