| 摘要 |
PURPOSE: To realize fine patterning and reduction of ON resistance in an MOSFET for high frequency amplification having a drain offset region. CONSTITUTION: Conductor plugs 13(P1) for leading out electrode are provided on a source region 10, a drain region 9 and a reach through layer 3(4). The conductor plugs 13(P1) are connected, respectively, with first layer interconnections 11s, 11d(M1) which are connected, on the conductor plugs 13(P1), with second layer interconnections 12s, 12d for lining. |
