Magnetostatic wave device with specified angles relating the transducer, magnetic thin film, and bias magnetic field

摘要

A magnetostatic wave device includes a Gd3Ga5O12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd3Ga5O12 substrate by liquid-phase epitaxy. A transducer operates for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20°<=|theta1+theta2|<=35°, where "theta1" denotes an angle between a longitudinal direction of the transducer and a <001> orientation of the crystal in the magnetic thin film, and "theta2" denotes an angle between a transverse direction of the transducer and a specified direction. The specified direction is parallel to a line of intersection between a horizontal plane of the magnetic thin film and a given plane which is perpendicular to the horizontal plane of the magnetic thin film and which contains a direction of the bias magnetic field. Also, there is a relation as |theta3|<=75°, where "theta3" denotes an angle between the specified direction and the direction of the bias magnetic field.