| 摘要 |
PURPOSE: A substrate treatment method is provided to shorten a processing time and perform uniformally heating for a substrate. CONSTITUTION: When aging processing is performed, a ratio of water vapor contained in a processing gas is made comparatively large for a certain period of time from start of the processing, whereby it is accelerated for collides of TEOS to be gelled and chained in a network form, so that heating is further uniformly performed for the wafer W. Thereafter, the ratio of water vapor in the processing gas is decreased, so that a water content which is contained in the insulating film material after the aging processing can be reduced in amount.
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