| 摘要 |
PURPOSE: A method of metallization is to deposit and anneal tungsten containing nitrogen component without forming of titanium and titanium nitride to form a tungsten wire having low specific resistance, thereby improving contact resistance and junction leakage current property. CONSTITUTION: An oxide film(20) is formed on a semiconductor substrate(10). A contact hole is formed at the oxide film. An amorphous silicon is formed on thhe oxide film. A tungsten film(40) containing nitrogen is deposited on the oxide film. The tungsten film is annealed at high temperature so that the nitrogen contained the tungsten film is diffused to form a tungsten nitride film(50) at junction face with the amorphous silicon film. The amorphous silicon film is an initial condition for forming the tungsten film by chemical vapor deposition technique. A flow rate of SiH4 is 10 to 30 sccm. A flow rate of Ar is 7000 to 9000 sccm. An initial process of the SiH4 is performed for 5 to 20 seconds at a process temperature of 390 to 420 deg.C to be formed in a thickness of 50 to 150 angstrom.
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