METHOD OF INCREASING ADHESION BETWEEN COPPER AND SILICON NITRIDE

摘要

PROBLEM TO BE SOLVED: To provide a method of increasing the adhesion between copper and silicon nitride. SOLUTION: First, a substrate coated with a dielectric layer is prepared. Then, a copper layer is formed on the dielectric layer and a copper phosphide intermediate layer is formed on the copper layer by a PECVD method and then a silicon nitride layer is formed on the copper phosphide intermediate layer. All the copper oxide layers appearing on the surface of the copper layer are turned into a copper phosphide intermediate layer. The copper phosphide intermediate layer has a lower resistance than a copper oxide and has an excellent property of effectively preventing the diffusion of copper into the dielectric layer surrounding copper.