| 摘要 |
<p>A polishing compound comprising polishing abrasive grain and peptide; a polishing compound slurry comprising an aqueous medium and the polishing compound suspended therein preferably together with an oxidizing agent and preferably at a pH of 7 or higher; a method of polishing a layer of a metal such as copper and/or a arrier layer which comprises polishing by the use of a polishing cloth of a CMP apparatus carrying the polishing compound slurry thereon. The polishing compound and the polishing method can be used in the CMP process in a semiconductor manufacturing process for polishing a metal layer and/or a barrier layer while suppressing the excess oxidation of the metal layer and for controlling polishing rate in accordance with the use of the resultant product.</p> |
