Zwischenträgersubstrat mit hoher Verdrahtungsdichte für elektronische Bauelemente

摘要

The upper side of the thin electroconductive, especially metal substrate (1) is covered by a first insulating layer (6) through which conductor systems (6,7,8,9) are contacted to the conductive substrate (1) at certain points. The lower side of the substrate (1) is structured in such a way by means of microstructuring technology that laterally self-insulated electroconductive substrate islands (3) are formed. This enables through contacts to be formed between the conductor system (6,7,8,9) and the contact pads (4) on the lower side of the substrate.